电竞博彩-电子竞技博彩

电竞博彩-电子竞技博彩-->电博概况 -->师资介绍

盛喆

时间:2024-04-23 16:20:26 文章来源 :院办 浏览量:1

盛喆


教师基本信息 

姓名: 盛喆

办公电话:无

邮箱:sz19324@163.com

指导专业:电子科学与技术,电子信息


二、研究领域及方向

半导体材料、器件与工艺

二维半导体电子、光电子器件


三、主讲课程


四、教育及工作经历

20242月——至今 杭州师范大学电子竞技博彩 专任教师

20236月 于复旦大学获微电子学与固体电子学专业博士学位

20186月 于西安电子科技大学获微电子学与固体电子学专业硕士学位

20156月 于西南大学获电子科学与技术专业学士学位


五、学术简介

以第一作者/共同第一作者身份Nano Letters》、《Small Methods》、《Nano Research》等期刊上发表论文6


六、科研成果

【科研项目】

[1] 高温高性能BS-PT基压电陶瓷的相界精细调控及其低温烧结机理研究,国家自然科学基金委员会,2021-12-31,参与


【发表论文

[1] Zhe Sheng*, Jianguo Dong*, Wennan Hu, Yue Wang, Haoran Sun, David Wei Zhang, Peng Zhou, Zengxing Zhang. Reconfigurable Logic-in-Memory Computing Based on a Polarity-Controllable Two-Dimensional Transistor, Nano Letters, 2023, 23(11): 5242-5249.

[2] Yuehao Zhao*, Haoran Sun*, Zhe Sheng*, David Wei Zhang, Peng Zhou, and Zengxing Zhang. Recent progress on ambipolar 2D semiconductors in emergent reconfigurable electronics and optoelectronics[J]. 2023, 32(12), 128505.

[3] Rui Yu, Zhe Sheng, Wennan Hu, Yue Wang, Jianguo Dong, Haoran Sun, Zengguang Cheng, and Zengxing Zhang. A field-effect WSe2/Si heterojunction diode[J]. Chinese Physics B, 2023, 32(1): 018505.

[4] Yue Wang, Haoran Sun, Zhe Sheng, Jianguo Dong, Wennan Hu, Dongsheng Tang, and Zengxing Zhang. Van der Waals contacted WSe2 ambipolar transistor for in-sensor computing[J]. 2023, 16(11): 12713-12719.

[5] Wennan Hu, Hu Wang, Jianguo Dong, Haoran Sun, Yue Wang, Zhe Sheng, and Zengxing Zhang. Chemical Dopant-Free Controlled MoTe2/MoSe2 Heterostructure toward a Self-Driven Photodetector and Complementary Logic Circuits[J]. ACS Applied Materials & Interfaces, 2023, 15(14): 18182-18190.

[6] Zhe Sheng, Yue Wang, Wennan Hu, Haoran Sun, Jianguo Dong, Rui Yu, David Wei Zhang, Peng Zhou, Zengxing Zhang. Two-dimensional complementary gate-programmable PN junctions for reconfigurable rectifier circuit, Nano Research, 2022, 16(1): 1252-1258.

[7] Jianguo Dong, Zhe Sheng, Rui Yu, Wennan Hu, Yue Wang, Haoran Sun, David Wei Zhang, Peng Zhou, Zengxing Zhang. WSe2 N-Type Negative Capacitance Field-Effect Transistor with Indium Low Schottky Barrier Contact, Advanced Electronic Materials, 2022, 8(2): 2100829.

[8] Wennan Hu*, Zhe Sheng*, Xiang Hou, Huawei Chen, Zengxing Zhang, David Wei Zhang, Peng Zhou. Ambipolar 2D Semiconductors and Emerging Device Applications, Small Methods, 2021, 5(1):2000837.

[9] Zhe Sheng*, Shujing Wu*, Xianying Dai, Tianlong Zhao, Yue Hao. A first-principles study of hydrogen storage capacity based on Li–Na-decorated silicene[J]. Physical Chemistry Chemical Physics, 2018, 20(20): 13903-13908.

[10] 盛喆, 戴显英, 苗东铭, 吴淑静, 赵天龙, 郝跃. Li吸附组分下硅烯氢存储性能的第一性原理研究[J]. 2017, 66(21): 217101.

研究[J]. 2017, 66(21): 217101.


【教材(专著)】

【专利】

七、荣誉与奖励